Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4523961A · kind A · utility
17Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1982 |
| Grant date | Jun 18, 1985 |
| Priority date | — |
| Expiry date | Nov 12, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing patternable resistive regions in III-V compound semiconductor devices and a resulting device structure having improved current characteristics. III-V semiconductor substrates are irradiated with inert ions to produce a resistive region therein. At least one epitaxial layer is grown over the substrate while maintaining the resistive characteristics within the substrate. A second resistive region is then formed in at least the top epitaxial layer. This second resistive region is aligned with the first one in order to minimize current spread through the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.