Process of producing silicon ribbon with p-n junction
US4523966A · kind A · utility
13Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1984 |
| Grant date | Jun 18, 1985 |
| Priority date | — |
| Expiry date | Sep 13, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosed process produces a silicon ribbon wafer with a p-n junction, by melting a raw silicon material, ejecting the molten silicon material onto a rotary cooling member so as to produce a silicon ribbon wafer through super-rapid cooling, and applying an impurity element whose polarity is opposite to that of the raw silicon material onto the thus formed silicon ribbon wafer at a temperature of not lower than 600.degree. C. and cooled from said temperature, whereby a p-n junction is formed in the silicon ribbon wafer simultaneously with the production of the fully solidified silicon ribbon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.