Integrated electroacoustic transducer with built-in bias
US4524247A · kind A · utility
54Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1983 |
| Grant date | Jun 18, 1985 |
| Priority date | — |
| Expiry date | Jul 7, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is an electroacoustic transducer structure which can be formed in a semiconductor substrate and incorporated as part of an integrated circuit, and which provides a built-in dc bias for operation. An appropriate density of fixed charge is provided in an insulating layer adjacent to one of the electrodes in the gap between electrodes. Methods of manufacture are also disclosed including means for introducing the charge by contacting the insulating layer with a liquid medium, plasma charging, or by ion beam implanting into the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.