Photo transistor

US4524375A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Werner Baumgartner
• Dieter Krockow · Munich, DE
• Jeno Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Apr 10, 1984
• Grant date: Jun 18, 1985
• Expiry date: Apr 10, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/103

Abstract

Photo transistor, including a semiconductor body having a surface, a region placed on the surface of the body being intended for light exposure having an edge and a remainder of the region, a collector zone placed in the body and having at least a part thereof emerging to the surface of the body, a base zone being embedded in a planar manner in the collector zone and having at least a part thereof emerging to the surface of the body, an emitter zone being embedded in a planar manner in the base zone, an emitter electrode disposed on the emitter zone, an insulating layer covering the region intended for exposure, an auxiliary zone being embedded in the surface of the body and having a conductivity type being opposite to that of the collector zone, an auxiliary electrode being placed on the insulating layer and overlapping at least the part of the base zone emerging to the surface and the auxiliary zone and covering the part of the collector zone emerging to the surface, the insulating layer having a relatively thicker part and a relatively thinner part both being placed under the auxiliary electrode, the thicker part being placed over the edge of the region intended for exposure and…