Cylindrical post magnetron sputtering system
US4525264A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 7, 1981 |
| Grant date | Jun 25, 1985 |
| Priority date | — |
| Expiry date | Dec 7, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a tubular bodied cathode of a sputtering magnetron, at least one permanent magnet is mounted so as to produce magnetic field flux lines that lie in planes oriented transverse to the axis of the cathode body, along a predetermined length thereof. Through appropriate biasing, in a partial pressure ionizable gas atmosphere, a plasma is generated that resembles a closed loop tunnel extending along said predetermined length on the outer surface of the cylindrical cathode, as defined by the magnetic field. Relative rotation between the cathode and the magnetic field provides for even erosion of sputtering material from the surface of the cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.