Photochemical vapor deposition apparatus
US4525381A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1983 |
| Grant date | Jun 25, 1985 |
| Priority date | — |
| Expiry date | Dec 29, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a photochemical vapor deposition apparatus, a reaction space in which a substrate is to be placed and a discharge space adjacent to the reaction space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical decomposition reaction of a photoreactive gas, are surrounded by the same vessel, and discharging electrodes are provided in the discharge space so as to be opposite to each other in a first level and a second level, which are different in level in the direction in which the spaces align. The discharging electrode arranged in the first level, which is closer to the reaction space, has such a configuration or arrangement that an ultraviolet ray-passing opening is formed. According to the apparatus, a vapor-deposited film can be formed with high efficiency, because a large quantity of ultraviolet rays can be applied to the substrate without any damage of the vapor-deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.