Porous semiconductor dopant carriers
US4525429A · kind A · utility
9Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1983 |
| Grant date | Jun 25, 1985 |
| Priority date | — |
| Expiry date | Jun 8, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12153
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant carrier comprised of SiC, elemental silicon or mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.