Enhanced adhesion of films to semiconductors or metals by high energy bombardment
US4526624A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1982 |
| Grant date | Jul 2, 1985 |
| Priority date | — |
| Expiry date | Jul 2, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.