Method of fabricating a semiconductor pn junction
US4526632A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1983 |
| Grant date | Jul 2, 1985 |
| Priority date | — |
| Expiry date | Feb 9, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in a Zn atmosphere to produce an n type region. Crystal growth is conducted while controlling the vapor pressure of the constituent Group IVB element to produce a p type region. A combination of all these steps gives a more stable pn junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.