Crucible for semiconductor manufacturing purposes and a process for manufacturing the crucible
US4528163A · kind A · utility
31Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 4, 1982 |
| Grant date | Jul 9, 1985 |
| Priority date | — |
| Expiry date | Feb 4, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crucible for semiconductor technology purposes, especially for the production of silicon crystals, comprising an outer layer portion or layer of silicon dioxide, especially an outer made from granular natural quartz, and an inner lining made from synthetic crystalline quartz is described. The inner lining has on its interior surface a thin amorphous layer suitably made by heating a synthetic quartz layer disposed over a granular natural quartz layer at a sufficient temperature for a sufficient period of time to convert at least a portion of the synthetic crystalline quartz to the amorphous state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.