Process for the amorphous growth of an element with crystallization under radiation
US4529617A · kind A · utility
29Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1984 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Apr 18, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process for the amorphous growth of an element with crystallization under radiation. An element is deposited on a support contained in an enclosure under a vacuum in known manner and simultaneously one or more predetermined surfaces of the layer deposited on the support are irradiated, said irradiation being obtained by a coherent electromagnetic irradiation radiation beam having a power and wavelength suitable for desorbing said surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.