Gate controlled switch
US4529999A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1982 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Jul 9, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/291
Abstract
An improved semiconductor device, particularly a gate controlled switch is provided by optimally fitting an involute spiral cathode-gate structure into a substantially square device. 4N cathode-gate branches radiate from a central gate portion and intersect the perimeter of the square device region at predetermined locations, N per side, where N is an integer. Four of the branches tangentially intercept the square perimeter at a distance R from a centerline where R is the radius of the central gate portion. The origin of the branches is angularly displaced from the line connecting the die center to the tangential intercept point by (L/R)- arctan (L/R) radians where L is half the edge length of the square device region. Improved thermal performance is obtained by thermally coupling the cathode heat spreader to the gate as well as cathode portions of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.