High voltage integrated semiconductor devices using a thermoplastic resin layer
US4530001A · kind A · utility
4Cited by
3References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 15, 1981 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Sep 15, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device comprises a semiconductor substrate, a plurality of spaced active elements, for example, of a planer type formed on one surface of the substrate, and a supporting plate bonded to the opposite surface of the substrate. A groove is cut through the substrate to reach the supporting plate for isolating the active elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.