Process for the production of silicon nitride
US4530825A · kind A · utility
8Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 12, 1984 |
| Grant date | Jul 23, 1985 |
| Priority date | — |
| Expiry date | Apr 12, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B21/0685
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for the production of silicon nitride by reaction of silicon dioxide, carbon and nitrogen at temperatures above about 1300.degree. C. whereby a partial pressure of nitrogen above 1 bar is maintained during the reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.