Method for producing a thin film resistor
US4530852A · kind A · utility
1Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1984 |
| Grant date | Jul 23, 1985 |
| Priority date | — |
| Expiry date | Jan 16, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Method for producing a thin film resistor by vapor deposition or cathode sputtering techniques, wherein part of the resistance area of the film is covered by an electrically insulating layer which prevents oxygen diffusion onto the resistance material and causes a decrease of the resistance during aging, while the rest of the resistance area remains free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.