Patent · US Expired

Method for producing a thin film resistor

US4530852A · kind A · utility

1Cited by
5References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 16, 1984
Grant dateJul 23, 1985
Priority date
Expiry dateJan 16, 2004

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01C17/265
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Method for producing a thin film resistor by vapor deposition or cathode sputtering techniques, wherein part of the resistance area of the film is covered by an electrically insulating layer which prevents oxygen diffusion onto the resistance material and causes a decrease of the resistance during aging, while the rest of the resistance area remains free.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.