Method of forming amorphous silicon film
US4532199A · kind A · utility
107Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1984 |
| Grant date | Jul 30, 1985 |
| Priority date | — |
| Expiry date | Feb 27, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an amorphous silicon film includes the steps of bringing a gas which is pre-excited by electron cyclotron resonance generated by an alternating electric field and a magnetic field into contact with a raw material gas containing silicone atoms in a reaction chamber in which a substrate is placed, so that the raw material gas is converted to radicals, and forming an amorphous silicon film on a surface of the substrate by the reaction of radicals therewith. Microwaves can be used as the alternating electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.