Photodetector with enhanced light absorption
US4532537A · kind A · utility
49Cited by
14References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 27, 1982 |
| Grant date | Jul 30, 1985 |
| Priority date | — |
| Expiry date | Sep 27, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/917
Abstract
A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.