Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components
US4532694A · kind A · utility
8Cited by
1References
12Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 27, 1983 |
| Grant date | Aug 6, 1985 |
| Priority date | — |
| Expiry date | Jun 27, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Integration of optoelectronic component and electronic components in a planar surface of a semi-insulating substrate such as gallium arsenide. A depression is etched into the planar surface to contain the transverse junction stripe laser structure which is grown by epitaxial layers. In the resulting structure the surface of the epitaxial layers forms a portion of the planar surface, thus placing the electrical and optical elements on or at the planar surface to facilitate fabrication and testing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.