Method for manufacturing crystalline film
US4534820A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1982 |
| Grant date | Aug 13, 1985 |
| Priority date | — |
| Expiry date | Oct 15, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/929
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film of a metal of which eutectic or compound is produced together with a semiconductor which is to be grown in its crystalline form is deposited on an amorphous (quartz glass) substrate. The thin film is patterned with a periodic pattern of a polygon having cross angles of multiples of about 60.degree., then the resulting substrate is heated at a temperature higher than the eutectic temperature of the metal and the semiconductor, and the semiconductor is deposited on the thin film under such heating condition, so that a crystalline film of the semiconductor is precipitated on the substrate. Such crystalline film is grown on a planar substrate at a low temperature of about eutectic temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.