Integrated circuits
US4535220A · kind A · utility
6Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1982 |
| Grant date | Aug 13, 1985 |
| Priority date | — |
| Expiry date | Sep 30, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit comprises a substrate having a plurality of components electrically isolated by regions of amorphous material formed by laser irradiation. Typically the laser radiation has a wavelength less than 400 nm a pulse length between 0.1 and 10 .mu.sec, and a power density between 0.1 and 0.8 J/cm.sup.2. The substrate material may be Si, Ge, GaAs, GaAlAs, InAs, InP, InAlP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.