Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
US4536251A · kind A · utility
17Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Jun 4, 1984 |
| Grant date | Aug 20, 1985 |
| Priority date | — |
| Expiry date | Jun 4, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for eliminating laser induced substrate fissures associated with laser annealed crystallization of patterned silicon areas, for increasing the yield of useable single crystal areas. The fissures are created by enhanced etching of the substrate, at the exposed edges of the areas, during the removal of a dimension stabilizing encapsulating layer. A post crystallization, high temperature anneal, in an oxidizing atmosphere prevents the enhanced etching of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.