Production of silicon carbide

US4536379A · kind A · utility

Assignee

• Graphite Sales, Inc. · US

Inventors

• Walter H. Carlson · Aurora, US
• Gerald B. Zander · North Olmsted, US
• George C. Hanna · Elmont, US
• Kevin L. Burmeister · Kent, US

Key dates

• Filing date: Jun 2, 1983
• Grant date: Aug 20, 1985
• Expiry date: Jun 2, 2003

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2006/80
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process for the manufacture of silicon carbide crystals and whiskers comprises reacting at a temperature between 1,400.degree. C. and 2,100.degree. C. and in the presence of an inert gas, a material including as essential ingredients carbon, alumina, iron oxide, potassium oxide, and silica in an amount to provide a carbon to silicon ratio of from about 0.84:1 to about 2.17:1.