Photocathode
US4536679A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1982 |
| Grant date | Aug 20, 1985 |
| Priority date | — |
| Expiry date | Nov 4, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/38
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The photocathode is of the type which comprises a photo-emissive layer consisting of at least an active layer of the P-type, a solid support for said semiconductor of a material which is transparent to radiation, a layer having a bonding glass for the photo-emissive layer on the support. The invention is characterized in that the support comprises two parts situated one on top of the other and which are bonded together, namely a thick second part (thickness for example 5 mm) of a type of glass having properties of thermal expansion which are substantially identical to those of the bonding glass and a part in the form of a disk-shaped first part (thickness for example 1 mm) of a material having softening and transition points which are much higher than those of the bonding glass and of the glass of the thick part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.