Fabrication of T-shaped metal lines for semiconductor devices
US4536942A · kind A · utility
21Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1984 |
| Grant date | Aug 27, 1985 |
| Priority date | — |
| Expiry date | Oct 5, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/143
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating MESFET devices having a T-shaped gate electrode is disclosed. The method includes the formation of a single layer of resist material on a semiconductor surface; formation of a resist cavity through optical lithography, the cavity exposing a selected portion of the semiconductor surface; depositing by way of dual-angle evaporation gate walls within said resist cavity, the gate walls defining a T-shaped gate cavity; depositing gate electrode material within the gate cavity, removing the resist material, and removing the gate walls from the gate electrode material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.