Method for removing semiconductor layers from salt substrates
US4537651A · kind A · utility
8Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1982 |
| Grant date | Aug 27, 1985 |
| Priority date | — |
| Expiry date | Nov 12, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1911
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.