Patent · US Expired

Process for the manufacture of semiconductor wafers with a rear side having a gettering action

US4539050A · kind A · utility

66Cited by

6References

12Claims

0Family size

Assignee

Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

Josef Kramler · Altötting, DE
Franz Kuhn-Kuhnenfeld · Emmerting, DE
Hans Gerber · Burghausen, DE

Key dates

Filing date	Oct 19, 1983
Grant date	Sep 3, 1985
Priority date	—
Expiry date	Oct 19, 2003

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/06
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

For the manufacture of semiconductor wafers with a rear side having a geting action in subsequent oxidation processes by means of the action of light, especially laser, radiation ("laser damage"), there are advantageously chosen wafers with a fine surface structure that contains faces that are inclined by at least 15.degree. in the actual profile by comparison with the geometrically ideal profile of the surface according to known standards. As a result, in comparison to smooth surfaces, considerable savings in energy and time are achieved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.