Semiconductor memory having a dynamic discharge circuit
US4539659A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1983 |
| Grant date | Sep 3, 1985 |
| Priority date | — |
| Expiry date | Feb 24, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/415
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory includes a dynamic discharge circuit for the quick discharging of a power supply line to which a memory matrix row is connected when this power supply line changes over from the electrical selected state to the electrical rest state. A transistor which is rendered conductive by a dynamic potential difference which arises, due to the slow discharge of the power supply line, between this line and the selection circuit thereof, supplies a current for a brief period of time in order to achieve the quick discharging. The invention is typically used notably for the discharging of power supply lines of E.C.L.-type random access memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.