Patent · US Expired

Semiconductor laser CRT

US4539687A · kind A · utility

54Cited by

7References

16Claims

0Family size

Assignee

AT&T Bell Laboratories · US

Inventors

Eugene I. Gordon · Madison, US
Uri Levy · Rehovot, IL

Key dates

Filing date	Dec 27, 1982
Grant date	Sep 3, 1985
Priority date	—
Expiry date	Dec 27, 2002

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/20
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam direction is essentially parallel to the e-beam direction and hence is scannable.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.