Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4539743A · kind A · utility
19Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1983 |
| Grant date | Sep 10, 1985 |
| Priority date | — |
| Expiry date | Nov 28, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.