Copper plating bath having increased plating rate, and method
US4540473A · kind A · utility
7Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1983 |
| Grant date | Sep 10, 1985 |
| Priority date | — |
| Expiry date | Nov 22, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D3/38
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A copper plating bath containing a sulfur-containing anion other than sulfate anion and/or a selenium-containing anion other than a selenate anion and/or a tellurium-containing anion other than a tellurate anion in an amount sufficient to increase the plating rate, and method for electroplating copper onto a substrate with the plating bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.