Sintered aluminum nitride and semi-conductor device using the same
US4540673A · kind A · utility
41Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1982 |
| Grant date | Sep 10, 1985 |
| Priority date | — |
| Expiry date | Apr 29, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.