Method of manufacturing a moisture sensor

US4541904A · kind A · utility

Assignee

• Endress u Hauser GmbH u Co. · DE

Inventors

• Ernst Luder · Stuttgart, DE
• Traugott Kallfass · Bornsteiner Straße, DE

Key dates

• Filing date: Nov 9, 1983
• Grant date: Sep 17, 1985
• Expiry date: Nov 9, 2003

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/225
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A moisture sensor is manufactured by applying a thin layer of tantalum oxide to a moisture insensitive substrate and placing at least two electrodes on the tantalum oxide layer. The tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm.sup.3. The low density tantalum may be applied by cathode sputtering and the oxide may be formed by anodic oxidation.