Method for eliminating defects in a photodetector
US4543171A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1984 |
| Grant date | Sep 24, 1985 |
| Priority date | — |
| Expiry date | Mar 22, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
The performance of a photodetector is reduced by the presence of an electrical defect such as a short or a shunt. The invention is a method of improving the performance of this photodetector by preferentially removing a portion of an exposed surface of a detector electrode at the defect site. The preferential etching of the exposed surface is obtained by immersing the photodetector in a chemical etching ambient which has an etching rate for the exposed surface of the electrode which increases with increasing temperature while applying a reverse-bias voltage to the electrodes. The reverse-bias voltage has sufficient magnitude to cause a local increase in temperature of the exposed surface at the defect site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.