Solid state image sensor
US4543489A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1985 |
| Grant date | Sep 24, 1985 |
| Priority date | — |
| Expiry date | Feb 28, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/192
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.