Amorphous silicon semiconductor and process for same
US4544423A · kind A · utility
36Cited by
8References
8Claims
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Key dates
| Filing date | Feb 10, 1984 |
| Grant date | Oct 1, 1985 |
| Priority date | — |
| Expiry date | Feb 10, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, the growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.