Deposition of borophosphosilicate glass
US4546016A · kind A · utility
12Cited by
4References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 6, 1984 |
| Grant date | Oct 8, 1985 |
| Priority date | — |
| Expiry date | Aug 6, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of depositing borophosphosilicate glass (BPSG) on a substrate is disclosed. The improved method uses temperatures substantially lower than conventional and a volume ratio of oxygen to the total hydride content in the deposition mixture substantially higher than conventional. A BPSG film of increased purity is produced at a rate of deposition substantially faster than conventional procedures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.