Method of manufacturing semiconductor device utilizing selective epitaxial growth under reduced pressure
US4547231A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 1984 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Jun 26, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor layers are selectively epitaxially grown in portions having an insulating film removed which is formed on a substrate by selective epitaxial growth under reduced pressure. With respect to a circumferential region outwardly of the removed portions in which the semiconductor elements are to be provided, there are formed one or more removed portions (dummy portions) in which no semiconductor element is provided, thereby making arrangement of the removed portions as even as possible with respect to the entire surface of the insulating film, to overcome position dependency in flatness of the semiconductor layers to be obtained. The semiconductor layers grown in the dummy portions may be left not to have semiconductor elements formed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.