Method for growing diamond crystals
US4547257A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1984 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Sep 25, 2004 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2203/068
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Diamond crystals are grown by subjecting reaction materials of nondiamond carbon, a solvent metal, and diamond seeds to pressure and temperature conditions in the diamond-stable region. The reaction materials are in the form of a pair of a superimposed solvent metal plate and a nondiamond carbon plate or a pile made of a plurality of the pairs of the superimposed solvent metal plate and nondiamond carbon plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent metal plate and nondiamond carbon plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent metal and the nondiamond carbon or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 50 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent growth diamond crystal particles is from 50 to 300 .mu.m. The diamond crystals are allowed to grow until their sizes reach at least …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.