Solar cells and photodetectors
US4547622A · kind A · utility
37Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1984 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Apr 27, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
An improved photovoltaic device in which a charge separation junction is provided over a charge confining heterojunction. The charge separation junction is a junction formed of an n.sup.+ -doped direct bandgap layer on a p-doped direct bandgap active layer. The charge confining heterojunction is formed by the interface of the active layer with a Back Surface Layer (BSL) of higher bandgap material than the active layer to provide a Back Surface Field (BSF). The percentage of Al in the layers may vary from Y=O to x.ltoreq.0.42. The structure applies to both crystalline and amorphous material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.