Hybrid power semiconductor switch
US4547686A · kind A · utility
14Cited by
6References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1983 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Sep 30, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/567
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conduction, rendering one power electrode of the bipolar transistor open. Means provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.