Two-dimensional semiconductor image sensor and method of operating the same
US4547806A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1983 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Jul 8, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/621
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A two-dimensional semiconductor image sensor has row lines which are selectable by way of a vertical shift register to drive first selection transistors of row and column oriented sensor elements. Column lines are connected to a read-out line by way of switches which are sequentially driven by outputs of a horizontal shift register. The goal is to increase the signal-to-noise ratio and is achieved by the provision of second selection transistors for the sensor elements which are connected in series with the first selection transistors, by way of row selection transistors which connect the row lines to the outputs of the vertical shift register, and by way of a difference-forming stage which is connected to the read-out line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.