Process for producing a semiconductor laser with several independent wavelengths and laser obtained by this process
US4547956A · kind A · utility
Inventors
Key dates
| Filing date | Mar 28, 1983 |
| Grant date | Oct 22, 1985 |
| Priority date | — |
| Expiry date | Mar 28, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Process for producing a laser having several wavelengths, wherein: PA0 a first double heterostructure is produced by epitaxy with an active layer having a first composition, PA0 the first double heterostructure obtained is etched into the substrate, through a mask having openings in the form of strips, which leads to a substrate on which there are strips of the first double heterostructure separated by etched portions, PA0 a second double heterostructure with an active layer having a second composition is grown in the etched portions, PA0 a groove is formed between the first and second heterostructures down to the contact layer, and PA0 the groove undergoes proton bombardment. The invention also relates to the laser obtained by this process. Application to optical telecommunications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.