Heterojunction semiconductor device
US4549195A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 14, 1983 |
| Grant date | Oct 22, 1985 |
| Priority date | — |
| Expiry date | Apr 14, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode and wherein the layer having the greatest energy band gap fully covers the boundaries or perimeter of the layer having a lesser energy band gap to reduce surface leakage current. Further, a semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode wherein the layer having the greatest energy band gap has spaced-apart P regions to form the anode of the heterojunction diode whereby the heterojunction diode is buried below the surface of the layer having the greatest energy band gap. The invention reduces the problem of surface and bulk leakage across heterojunction diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.