Intensity of a light beam applied to a layered semiconductor structure controls the beam
US4549788A · kind A · utility
11Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 3, 1983 |
| Grant date | Oct 29, 1985 |
| Priority date | — |
| Expiry date | Jan 3, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/01716
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device includes a layered semiconductor structure having a variable input light beam applied to the structure with an E field component polarized normal to the layers. Intensity of the input light beam controls charge trapped in the layers, the dielectric constant of the layers containing the trapped charge, and the propagation of the input light beam within the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.