Semiconductor interferometer
US4550330A · kind A · utility
17Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 29, 1984 |
| Grant date | Oct 29, 1985 |
| Priority date | — |
| Expiry date | Jun 29, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/383
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An interferometer is constructed by providing a bifurcated branch conductive path coplanar with a heterojunction in a semiconductor with a band discontinuity that produces a potential well so that electron wave conduction at the heterojunction can be locally influence with an electric field applied to one branch of the bifurcated path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.