Fabrication of small dense silicon carbide spheres

US4551436A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Curtis Alan Johnson · Schenectady, US
• Gary M. Renlund · Salt Lake City, US
• Charles E. Van Buren · Schenectady, US
• Svante Prochazka · Ballston Lake, US

Key dates

• Filing date: Apr 11, 1984
• Grant date: Nov 5, 1985
• Expiry date: Apr 11, 2004

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B43K1/082
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Spherical particles of polycrystalline silicon carbide having a density greater than 80% of the theoretical density for silicon carbide and having an average diameter ranging from about 10 microns to about 5000 microns are produced by forming spherical agglomerates of a sinterable silicon carbide powder and sintering the agglomerates at a temperature ranging from about 1900.degree. C. to about 2300.degree. C.