Process for producing amorphous and crystalline silicon nitride
US4552740A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1985 |
| Grant date | Nov 12, 1985 |
| Priority date | — |
| Expiry date | Feb 22, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/61
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.