Method of selectively etching high impurity concentration semiconductor layer
US4554046A · kind A · utility
18Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1984 |
| Grant date | Nov 19, 1985 |
| Priority date | — |
| Expiry date | Sep 19, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching a high impurity concentration semiconductor layer by making use of a difference in impurity concentration is disclosed. According to this method, the high impurity concentration semiconductor layer is exposed to an aqueous solution of a hydrogen fluoride-nitric acid-acetic acid-based etching solution while being subjected to ultrasonic-vibration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.