Photosensitive resin composition and method for forming fine patterns with said composition
US4554237A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 1982 |
| Grant date | Nov 19, 1985 |
| Priority date | — |
| Expiry date | Dec 22, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/128
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition. Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.