Patent · US Expired

Integrated electron circuits having Schottky field effect transistors of P- and N-type

US4554569A · kind A · utility

12Cited by
9References
18Claims
0Family size

Inventors

Key dates

Filing dateNov 3, 1982
Grant dateNov 19, 1985
Priority date
Expiry dateNov 3, 2002

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/01

Abstract

Electronic circuit containing at least one Schottky field effect transistor with contact elements having different Schottky barrier heights.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.