Integrated electron circuits having Schottky field effect transistors of P- and N-type
US4554569A · kind A · utility
12Cited by
9References
18Claims
0Family size
Inventors
Key dates
| Filing date | Nov 3, 1982 |
| Grant date | Nov 19, 1985 |
| Priority date | — |
| Expiry date | Nov 3, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/01
Abstract
Electronic circuit containing at least one Schottky field effect transistor with contact elements having different Schottky barrier heights.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.